SiZF906ADT - Vishay

SiZF906ADT Dual N-Channel MOSFET

www.vishay.com SiZF906ADT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS .

Features

• TrenchFET® Gen IV power MOSFET
• SkyFET® low-side MOSFET with integrated Schottky
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 30 0.00380 0.00117 0.00530 0.00158 11 46 60 60 Dual APPLICATIONS
• CPU core power N-Channel 1 MOSFET
• Computer / server peripherals GHS/G1
• POL G1Return/S1
• Synchronous buck converter
• Telecom DC/DC GLS/G2 N-Channel 2 MOSFET VI.