Si9948DY - TEMIC

Si9948DY Dual P-Channel Enhancement-Mode MOSFET

Si9948DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) –60 rDS(on) (W) 0.28 @ VGS = –10 V 0.50 @ VGS = –4.5 V ID (A) "2.0 "1.6 S1 S2 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View G1 G2 D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit.

Features

st FaxBack document #1217. A SPICE Model data sheet is available for this product (FaxBack document #5109). Siliconix S-47958—Rev. G, 15-Apr-96 1 Si9948DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb Dynamica VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V VDS =
  –40 V, VGS = 0 V VDS =
  –40 V, VGS = 0 V, TJ = 55_C VDS v
  –5 V,.