Si9943DY - TEMIC

Si9943DY Dual MOSFET

TEMIC Siliconix Si9943DY Dual Enhancement-Mode MOSFET (N- and P-Channel) Product Summary Vns(V) N-Channel 20 P-Channel -20 rnS(on) (Q) 0.125 @vGS = 10V 0.250@VGS = 4.5 V 0.160@VGS = -10 V 0.300 @ VGS = -4.5 V In (A) ±3.0 ±2.0 ±2.8 ±2.0 Dl Dl S2 80-8 0Sl Gl 2 S2 3 G2 4 Dl 7 Dl 6 D2 5 D2 G1o---J H 0 0 ~ ~ ThpView Sl D2 D2 :Hs N-Channel MO.

Features

rd) P-35337-Rev. C (05/02/94) Symbol RthJA N- or P-Cbannel 62.5 Unit 'CfW 1-71 TEMIC Si9943DY Siliconix Specifications (TJ - 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb rDS(on) Forward 'fransconductanceb Sf, Diode Forward Voltageb -n,.JJft.t.l.O_ f.t..1.._I_;. VSD VDS = VGS, ID = 250 jlA VDS = VGS,ID = -250 jlA VDS = Ov, VGS = ±20V VDS = 16 V, VGS = OV VDS = -16 V, VGS = OV VDS = 16.