Si9942DY Vishay Siliconix Complimentary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) 0.125 @ VGS = 10 V 0.250 @ VGS = 4.5 V 0.200 @ VGS = –10 V 0.350 @ VGS = –4.5 V ID (A) "3.0 "2.0 "2.5 "2.0 S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 D1 D1 S2 G2 G1 S1 N-Channel MOSFET D2 D2 P-Channel MOSFET ABSO.
l information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70130 S-000652—Rev. L, 27-Mar-00 N- or P-Channel 62.5 Unit _C/W www.vishay.com S FaxBack 408-970-5600 1 Si9942DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb Dynamica rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = VGS, ID.
Si9942DY Dual Enhancement-Mode MOSFET (N- and P-Channel) Product Summary VDS (V) rDS(on) (W) N-Channel 20 0.125 @ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI9940DY |
Siliconix |
Dual N-Channel Enhancement Mode MOSFET | |
2 | Si9943DY |
TEMIC |
Dual MOSFET | |
3 | Si9944DY |
TEMIC |
Dual N-Channel Enhancement-Mode MOSFET | |
4 | SI9945AEY |
Vishay Siliconix |
Dual N-Channel 60-V (D-S)/ 175C MOSFET | |
5 | SI9945BDY |
Vishay |
Dual N-Channel 60-V (D-S) MOSFET | |
6 | SI9945DY |
TEMIC |
Dual N-Channel Enhancement-Mode MOSFET | |
7 | SI9947DY |
TEMIC |
Dual P-Channel Enhancement-Mode MOSFET | |
8 | SI9948AEY |
Vishay Siliconix |
Dual P-Channel 60-V (D-S)/ 175C MOSFET | |
9 | Si9948DY |
TEMIC |
Dual P-Channel Enhancement-Mode MOSFET | |
10 | SI9910 |
Vishay Siliconix |
Adaptive Power MOSFET Driver1 | |
11 | SI9912 |
Vishay Siliconix |
Half-Bridge MOSFET Driver for Switching Power Supplies | |
12 | SI9913 |
Vishay Siliconix |
Dual MOSFET Bootstrapped Driver with Break-Before-Make |