SI9945AEY - Vishay Siliconix

SI9945AEY Dual N-Channel 60-V (D-S)/ 175C MOSFET

Si9945AEY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.080 @ VGS = 10 V 0.100 @ VGS = 4.5 V ID (A) "3.7 "3.4 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-S.

Features

ay.com S FaxBack 408-970-5600 RthJA 93 Symbol Typ Max 62.5 Unit _C/W 2-1 Si9945AEY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.7 A VGS = 4.5 V, ID = 3.4 A VDS = 15 V, ID = 3.7 A IS = 2.0 A, .