www.DataSheet4U.com Si9426DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0135 @ VGS = 4.5 V 0.0160 @ VGS = 2.5 V ID (A) 10 9.3 D SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si9426DY Si9426DY-T1 (with Tape and Reel) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERW.
TIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 10 A VGS = 2.5 V, ID = 8 A VDS = 10 V, ID = 10 A IS = 2.3 A, VGS = 0 V 30 0.0098 0.011 57 0.71 1.2 0.0135 0.0160 0.6 "100 1 5 V nA mA A W S V Symbol T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI9420DY |
Vishay Siliconix |
N-Channel Enhancement-Mode MOSFET | |
2 | SI9422DY |
Vishay Siliconix |
N-Channel Reduced Qg/ Fast Switching MOSFET | |
3 | SI9424BDY |
Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET | |
4 | SI9428DY |
Vishay Siliconix |
N-Channel 2.5-V (G-S) MOSFET | |
5 | SI9400DY |
Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET | |
6 | Si9405DY |
TEMIC |
P-Channel Enhancement-Mode MOSFET | |
7 | SI9407AEY |
Vishay Telefunken |
P-Channel 60-V (D-S)/ 175C MOSFET | |
8 | Si9407DY |
TEMIC |
P-Channel MOSFET | |
9 | SI9410BDY |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
10 | SI9410DY |
NXP |
N-channel enhancement mode field-effect transistor | |
11 | SI9410DY |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
12 | SI9430DY |
Vishay Siliconix |
P-Channel 30-V (D-S) MOSFET |