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Si9407DY |
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| Part Number | Si9407DY |
| Manufacturer | TEMIC |
| Description | P-Channel Enhancement-Mode MOSFET Si9407DY Product Summary VDS (V) –60 rDS(on) (W) 0.150 @ VGS = –10 V 0.240 @ VGS = –4.5 V SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View ID (A) "3.0 "2.4 SSS G DDDD P... |
| Features |
eet is available for this product (FaxBack document #5129).
Siliconix
1
S-47958—Rev. E, 15-Apr-96
Si9407DY
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb Dynamica
VGS(th) IGSS
IDSS ID(on) rDS(on)
gfs VSD
VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –48 V, VGS = 0 V VDS = –48 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = 3.0 A VGS = –4.5... |
| Document |
 Si9407DY Data Sheet
PDF 51.64KB |
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