Si8439DB - Vishay

Si8439DB P-Channel MOSFET

www.vishay.com Si8439DB Vishay Siliconix P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -8 RDS(on) () MAX. 0.025 at VGS = -4.5 V 0.030 at VGS = -2.5 V 0.037 at VGS = -1.8 V 0.061 at VGS = -1.5 V 0.125 at VGS = -1.2 V ID (A) a, e -9.2 -8.4 -7.6 -5.9 -1 Qg (TYP.) 33 MICRO FOOT® 1.6 x 1.6 D D2 843x9xx 3 1 1 1.6 mm 4G S Backside View Bump Si.

Features

• TrenchFET® power MOSFET: 1.2 V rated
• Ultra-small 1.6 mm x 1.6 mm maximum outline
• Ultra-thin 0.6 mm maximum height
• Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Low threshold load switch portable devices - Low power consumption - Increased battery life
• Ultra low voltage load switch for G S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source.