Si8410DB - Vishay

Si8410DB N-Channel MOSFET

www.vishay.com Si8410DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D Backside View Bump Side View 1 mm Marking code: xxxx = 8410 xxx = Date / lot traceability code PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V RDS(on) max. .

Features

• TrenchFET® power MOSFET
• Ultra small 1 mm x 1 mm maximum outline
• Ultra-thin 0.548 mm maximum height
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Load switch
• Power management
• High speed switching D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free MICRO FOOT Si8410DB-T2-E1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) Continuous source-d.