Si5475DDC - Vishay

Si5475DDC P-Channel MOSFET

New Product P-Channel 12-V (D-S) MOSFET Si5475DDC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.032 at VGS = - 4.5 V - 12 0.040 at VGS = - 2.5 V 0.052 at VGS = - 1.8 V ID (A) - 6a - 6a - 6a Qg (Typ.) 20 nC 1206-8 ChipFET 1 D DD DD Marking Code D S G BR XXX Lot Traceability and Date Code Part # Code Bottom View Ordering Informat.

Features

• Halogen-free
• TrenchFET® Power MOSFET APPLICATIONS
• Load Switch for Portable Devices S G D P-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (.