SI5475BDC - Vishay Intertechnology

SI5475BDC P-Channel MOSFET

P-Channel 12-V (D-S) MOSFET Si5475BDC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = - 4.5 V - 12 0.039 at VGS = - 2.5V 0.054 at VGS = - 1.8 V ID (A)a -6 -6 -6 Qg (Typ.) 15.5 nC FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET: 1.8 V Rated 1206-8 ChipFET 1 S D D D D D DG S Bottom Vie.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET: 1.8 V Rated 1206-8 ChipFET 1 S D D D D D DG S Bottom View G Marking Code BN XXX Lot Traceability and Date Code D Part # Code P-Channel MOSFET Ordering Information: Si5475BDC-T1-E3 (Lead (Pb)-free) Si5475BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Cont.