SI5475DC - Vishay Siliconix

SI5475DC P-Channel MOSFET

P-Channel 12-V (D-S) MOSFET Si5475DC Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.031 at VGS = - 4.5 V 0.041 at VGS = - 2.5 V 0.054 at VGS = - 1.8 V ID (A) - 7.6 - 6.6 - 5.8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET ® 1.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET ® 1 D D D D D DG S 1.8 mm Marking Code BF XX Lot Traceability and Date Code Part # Code 3.0 mm Bottom View Ordering Information: Si5475DC-T1-E3 (Lead (Pb)-free) Si5475DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA.