Si5401DC New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.032 @ VGS = −4.5 V −20 0.040 @ VGS = −2.5 V 0.053 @ VGS = −1.8 V FEATURES ID (A) −7.1 −6.4 −5.5 16.5 Qg (Typ) D D D D TrenchFETr Power MOSFET Ultra-Low On-Resistance Thermally Enhanced ChipFETr Package 40% Smaller Footprint Than TSOP-6 APPLICATIONS .
ID (A) −7.1 −6.4 −5.5 16.5 Qg (Typ) D D D D TrenchFETr Power MOSFET Ultra-Low On-Resistance Thermally Enhanced ChipFETr Package 40% Smaller Footprint Than TSOP-6 APPLICATIONS D Load Switch, PA Switch, and Battery Switch for Portable Devices www.DataSheet4U.com 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BO XXX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5401DC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Dr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si540 |
Silicon Labs |
Crystal Oscillator | |
2 | Si540 |
Skyworks |
Crystal Oscillator | |
3 | SI5402BDC |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
4 | SI5402DC |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
5 | Si5403DC |
Vishay |
P-Channel 30-V (D-S) MOSFET | |
6 | SI5404BDC |
Vishay Siliconix |
N-Channel 2.5-V (G-S) MOSFET | |
7 | SI5404DC |
Vishay Siliconix |
N-Channel MOSFET | |
8 | Si5406CDC |
Vishay |
N-Channel MOSFET | |
9 | SI5406DC |
Vishay Siliconix |
N-Channel MOSFET | |
10 | Si541 |
Skyworks |
Crystal Oscillator | |
11 | Si5410DU |
Vishay |
N-Channel MOSFET | |
12 | SI5411-H |
AUK |
IRED |