SI5402BDC - Vishay Siliconix

SI5402BDC N-Channel 30-V (D-S) MOSFET

Package: Pin Out: N-Channel, 30-V (D-S) MOSFET 1206-8 ChipFET® Identical Part Number Replacements: Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3 Si5402BDC-T1-E3 Replaces Si5402DC-T1 www.DataSheet4U.com Summary of Performance: The Si5402BDC is the replacement to the original Si5402DC; both parts perform identically, including limits to the parametric tables belo.

Features

ED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS = 10 V VGS= 10 V VGS = 4.5 V VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr 20 0.029 0.035 19 0.8 10 1.9 1.6 14 10 10 27 10 20 1.2 20 0.035 0.042 1.0 3.0 +100 -1 20 0.030 0.045 15 0.8 13 1.3 3.1 NS 10 10 25 10 30 1.2 20 nC Ω 15 15 40 15 60 ns 0.035 0.055 1.0 NS +100 -1 V nA µA A Ω S V Symbol Min Si5402BDC Typ Max Min Si5402DC Typ Max Unit Dynamic Total Gate Char.