Si4818DY - Vishay Siliconix

Si4818DY Dual N-Channel MOSFET

Si4818DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.0155 @ VGS = 10 V 0.0205 @ VGS = 4.5 V ID (A) 6.3 5.4 9.5 8.2 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 2.0 .

Features

D TJ, Tstg 1.3 1.4 0.9 5.4 30 5.3 4.2 0.9 1.0 0.64 - 55 to 150 2.2 2.4 1.5 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71122 S-31062—Rev. B, 26-May-03 www.vishay.com Steady-State Steady-State RthJA RthJC Channel-2 Typ 43 82 25 Schottky Typ 48 80 28 Symbol Typ 72 100 51 Max 90 125 63 Max 53 100 30 Max 60 100 35 Unit _C/W 1 Si4818DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = .