Si4565DY - Vishay Siliconix

Si4565DY MOSFET

New Product Si4565DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) N-Channel 40 0.040 at VGS = 10 V 0.045 at VGS = 4.5 V 0.054 at VGS = –10 V P-Channel –40 0.072 at VGS = –4.5 V ID (A) 5.2 4.9 –4.5 –3.9 Qg (Typ) 8 9 FEATURES D TrenchFETr Power MOSFET D 100 % Rg Tested D UIS Tested APPLICATIONS D CCFL I.

Features

D TrenchFETr Power MOSFET D 100 % Rg Tested D UIS Tested APPLICATIONS D CCFL Inverter RoHS COMPLIANT S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4565DY
  –T1
  –E3 (Lead (Pb)
  –free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) N-Channel P-Channel Parameter Symbol 10 secs Steady State 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 _C)a TA = 25 _C TA = 70 _C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanch.