SI4564DY - Vishay

SI4564DY MOSFET

www.DataSheet.co.kr Si4564DY Vishay Siliconix N- and P-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 RDS(on) (Ω) 0.0175 at VGS = 10 V 0.020 at VGS = 4.5 V 0.021 at VGS = - 10 V 0.028 at VGS = - 4.5 V ID (A)a Qg (Typ.) 10 9.2 - 9.2 - 7.4 9.8 21.7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Pow.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Notebook PCs D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4564DY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D1 D1 D2 D2 G1 G2 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Source.