SI4501BD - Vishay

SI4501BD MOSFET

Si4501BDY Vishay Siliconix Complementary (N- and P-Channel) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 30 0.017 at VGS = 10 V 0.020 at VGS = 4.5 V P-Channel 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V ID (A)a Qg (Typ.) 12 7.9 11 -8 - 6.8 16.5 S1 1 G1 2 S2 3 G2 4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4501BDY-T1-GE3 (.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Level Shift
• Load Switch S2 G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID 30 ± 20 12 9.5 9b, c 7.2b, c -8 ±8 -8 - 6.4 - 6.4b, c - 5.1b, c Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed .