Si4563DY - Vishay

Si4563DY N- and P-Channel 40-V (D-S) MOSFET

Si4563DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) (Ω) 40 0.016 at VGS = 10 V 0.019 at VGS = 4.5 V 0.025 at VGS = - 10 V - 40 0.032 at VGS = - 4.5 V ID (A)a 8 8 -8 - 7.5 Qg (Typ.) 56 6 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 FEATURES • Halogen-free According to IEC 61249-2-21 Avai.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested APPLICATIONS
• CCFL Inverter D1 S2 G2 G1 Top View Ordering Information: Si4563DY-T1-E3 (Lead (Pb)-free) Si4563DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS ± 16 TC = 25 °C 8 -8 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 8 8b, c - 6.5 - 6.6b, c TA = 70 °C 6.5b, c.