Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.020 at VGS = 4.5 V 0.030 at VGS = 2.5 V P-Channel - 20 0.060 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A) 9.1 7.5 - 5.3 - 4.1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • .
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
S2
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8D 7D 6D 5D
G2 D
G1
Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free) Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
10 s Steady State 10 s Steady State
Drain-Source Voltage
VDS 20
- 20
Gate-Source Voltage
VGS
± 12
± 12
Continuous Drain Current (TJ = 150 °C)a,b
TA = 25 °C TA = 70 °C
ID
9.1 7.3
6.6
- 5.3
- 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4500DY |
Vishay Siliconix |
Complementary MOSFET | |
2 | SI4501ADY |
Vishay Siliconix |
Complementary MOSFET | |
3 | SI4501BD |
Vishay |
MOSFET | |
4 | Si4501BDY |
Vishay |
Complementary (N- and P-Channel) MOSFET | |
5 | SI4501DY |
Vishay Siliconix |
Complementary MOSFET | |
6 | SI4505DY |
Vishay Siliconix |
MOSFET | |
7 | SI4511DY |
Vishay Siliconix |
MOSFET | |
8 | Si4532ADY |
Vishay |
N- and P-Channel MOSFET | |
9 | SI4532CDY |
Vishay |
MOSFET | |
10 | SI4532DY |
Vishay Siliconix |
N- and P-Channel 30-V MOSFET | |
11 | Si4532DY |
ON Semiconductor |
Dual N- and P-Channel FET | |
12 | Si4532DY |
Fairchild Semiconductor |
Dual N- and P-Channel FET |