Si4412DY - TEMIC

Si4412DY N-Channel Enhancement-Mode MOSFET

Si4412DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 30 rDS(on) (W) 0.028 @ VGS = 10 V 0.042 @ VGS = 4.5 V ID (A) "7.0 "5.8 D D D D SO-8 S S S G 1 2 3 4 Top View S S S N-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T.

Features

-96 1 Si4412DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID =7.0 A VGS = 4.5 V, ID = 3.5 A VDS = 15 V, ID = 7.0 A IS = 2 A, VGS = 0 V 30 0.021 0.030 16 0.75 1.1 0.028 0.042 1.0 "100 2 25 V nA mA A W S V Symbol Test.