Features
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-96
1
Si4412DY
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID =7.0 A VGS = 4.5 V, ID = 3.5 A VDS = 15 V, ID = 7.0 A IS = 2 A, VGS = 0 V 30 0.021 0.030 16 0.75 1.1 0.028 0.042 1.0 "100 2 25 V nA mA A W S V
Symbol
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