Si4412ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V 0.035 at VGS = 4.5 V ID (A) 8 6.6 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4412ADY-T1-E3 (Lead (Pb.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4412ADY-T1-E3 (Lead (Pb)-free) Si4412ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D G
D
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Tem.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si4412DY |
TEMIC |
N-Channel Enhancement-Mode MOSFET | |
2 | SI4410BDY |
Vishay Siliconix |
N-Channel MOSFET | |
3 | SI4410DY |
NXP |
N-channel FET | |
4 | Si4410DY |
Fairchild Semiconductor |
Single N-Channel MOSFET | |
5 | Si4410DY |
Vishay |
N-Channel MOSFET | |
6 | Si4410DY |
International Rectifier |
Power MOSFET | |
7 | Si4410DYPbF |
International Rectifier |
Power MOSFET | |
8 | Si4411DY |
Vishay |
P-Channel 30-V (D-S) MOSFET | |
9 | SI4413DY |
Vishay Siliconix |
P-Channel MOSFET | |
10 | SI4416DY |
NXP |
N-channel FET | |
11 | Si4416DY |
Vishay |
N-Channel MOSFET | |
12 | Si4401DDY |
Vishay |
P-Channel 40V (D-S) MOSFET |