Si4411DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.010 at VGS = - 10 V 0.0155 at VGS = - 4.5 V ID (A) - 13 - 10 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4411DY-T1-E3 (Lead (Pb)-free) Si4411DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET 8 7 6 5 D D D D G
• Notebook - Load Switch - Battery Switch
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Ope.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4410BDY |
Vishay Siliconix |
N-Channel MOSFET | |
2 | SI4410DY |
NXP |
N-channel FET | |
3 | Si4410DY |
Fairchild Semiconductor |
Single N-Channel MOSFET | |
4 | Si4410DY |
Vishay |
N-Channel MOSFET | |
5 | Si4410DY |
International Rectifier |
Power MOSFET | |
6 | Si4410DYPbF |
International Rectifier |
Power MOSFET | |
7 | Si4412ADY |
Vishay |
N-Channel 30-V (D-S) MOSFET | |
8 | Si4412DY |
TEMIC |
N-Channel Enhancement-Mode MOSFET | |
9 | SI4413DY |
Vishay Siliconix |
P-Channel MOSFET | |
10 | SI4416DY |
NXP |
N-channel FET | |
11 | Si4416DY |
Vishay |
N-Channel MOSFET | |
12 | Si4401DDY |
Vishay |
P-Channel 40V (D-S) MOSFET |