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N-Channel 30-V (D-S) MOSFET Si4416DY Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.018 @ VGS = 10 V 0.028 @ VGS = 4.5 V ID (A) 9.0 7.3 FEATURES D TrenchFETr Power MOSFET S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4416DY Si4416DY-T1 (with Tape and Reel) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLES.
D TrenchFETr Power MOSFET S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4416DY Si4416DY-T1 (with Tape and Reel) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 30 "20 9.0 6.9 7.5 5.6 5.
SI4416DY - NXP
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availabilit.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SI4410BDY |
Vishay Siliconix |
N-Channel MOSFET |
|
| 2 | SI4410DY |
NXP |
N-channel FET |
|
| 3 | Si4410DY |
Fairchild Semiconductor |
Single N-Channel MOSFET |
|
| 4 | Si4410DY |
Vishay |
N-Channel MOSFET |
|
| 5 | Si4410DY |
International Rectifier |
Power MOSFET |
|
| 6 | Si4410DYPbF |
International Rectifier |
Power MOSFET |
|
| 7 | Si4411DY |
Vishay |
P-Channel 30-V (D-S) MOSFET |
|
| 8 | Si4412ADY |
Vishay |
N-Channel 30-V (D-S) MOSFET |
|
| 9 | Si4412DY |
TEMIC |
N-Channel Enhancement-Mode MOSFET |
|
| 10 | SI4413DY |
Vishay Siliconix |
P-Channel MOSFET |
|
| 11 | Si4401DDY |
Vishay |
P-Channel 40V (D-S) MOSFET |
|
| 12 | SI4401DY |
Vishay Siliconix |
P-Channel MOSFET |
|