Si4407 - Nanxin

Si4407 P-Channel Enhancement MOSFET

Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4407 P-Channel Enhancement MOSFET Si4407 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipatio.

Features

·Low On resistance.
·-4.5V drive.
·RoHS compliant. Si4407 P-Channel Enhancement MOSFET Si4407 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings -30 +25 -9.2 -60 1.3 1.7 150 -55~+150 Unit V V A A W .