Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liabilit.
PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.006 @ VGS = 10 V 0.0075 @ VGS = 4.5 V ID (A) 17 14 D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested APPLICATIONS D Buck Converter D Synchronous Rectifier - Secondary Rectifier D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating J.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Si4356 |
Silicon Laboratories |
STANDALONE SUB-GHZ RECEIVER |
|
| 2 | Si4354DY |
Vishay |
N-Channel 30-V (D-S) MOSFET |
|
| 3 | SI4355 |
Silicon Laboratories |
LOW-CURRENT OOK/(G)FSK SUB-GHZ RECEIVER |
|
| 4 | Si4355-C |
Silicon Laboratories |
LOW-CURRENT OOK/(G)FSK SUB-GHZ TRANSCEIVER / TRANSMITTER AND RECEIVER |
|
| 5 | SI4300 |
Silicon Laboratories |
Dual-Band Monolithic Power Amplifier System |
|
| 6 | SI4300DY |
Vishay |
N-Channel 30-V (D-S) Fast Switching MOSFET |
|
| 7 | SI4300T |
Silicon Laboratories |
Tri-Band Monolithic Power Amplifier System |
|
| 8 | SI4308DY |
Vishay |
Dual N-Channel 30-V (D-S) MOSFET |
|
| 9 | Si4313-B1 |
Silicon Laboratories |
LOW-COST ISM RECEIVER |
|
| 10 | Si4320DY |
Vishay |
N-Channel 30-V (D-S) MOSFET |
|
| 11 | Si4322DY |
Vishay |
N-Channel MOSFET |
|
| 12 | SI4330DY |
Vishay Siliconix |
Dual N-Channel 30-V (D-S) MOSFET |
|