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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SW069R10VS ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·Low on resistance, low gate charge ·Excellent avalanche characteristics. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·LED bac.
·With TO-252(DPAK) packaging
·High speed switching
·Easy to use
·Low on resistance, low gate charge
·Excellent avalanche characteristics.
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·LED backlighting
·Motor control
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage Drain Current-Continuous Drain Current-Single Pulsed
±20
70 44
280
PD
Total Dissipation
158.2
Tj
Operating Junction Temperature
-55~15.
SW069R10VS - Samwin
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better.
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