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12 3 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 60V ID : 120A RDS(ON) : 5.2mΩ 2 1 3 Item .
TO-220
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 5.2mΩ)@VGS=10V
⚫ Low Gate Charge (Typ 94nC)
⚫ Improved dv/dt Capability
⚫ 100% Avalanche Tested
⚫ Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
General Description
12 3
1. Gate 2.Drain 3.Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
Order Codes
BVDSS : 60V
ID
: 120A
RDS(ON) : 5.2mΩ
2
1 3
Item.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SW055R68E7T |
Samwin |
N-channel MOSFET |
|
| 2 | SW05-0311 |
Tyco Electronics |
Match GaAs SPST Switch |
|
| 3 | SW058R72E7T |
Samwin |
N-channel MOSFET |
|
| 4 | SW05P |
AUK |
PIANO SWITCH |
|
| 5 | SW05P-K |
AUK |
PIANO SWITCH |
|
| 6 | SW05R-RD |
AUK |
SLIDE SWITCH |
|
| 7 | SW05S |
AUK |
SLIDE SWITCH |
|
| 8 | SW038R10ES |
Samwin |
N-channel MOSFET |
|
| 9 | SW03B-V1 |
ASCHIP |
Human body thermal release infrared sensing controller |
|
| 10 | SW06 |
Analog Devices |
Quad SPST JFET Analog Switch |
|
| 11 | SW065R68E7T |
Samwin |
N-channel MOSFET |
|
| 12 | SW068R08ET |
Samwin |
N-channel MOSFET |
|