SW068R08ET - Samwin

SW068R08ET N-channel MOSFET

1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 80V ID : 120A RDS(ON) : 7.1mΩ 2 1 3 Order Codes Item S.

Features

TO-220 TO-263
 High ruggedness
 Low RDS(ON) (Typ 7.1mΩ)@VGS=10V
 Low Gate Charge (Typ 59nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Synchronous Rectification, Li Battery Protect Board, Inverter 1 23 1 23 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 80V ID : 120A RDS(ON) : 7.1mΩ 2 1 3 .