SW038R10ES - Samwin

SW038R10ES N-channel MOSFET

This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 100V ID : 120A RDS(ON) : 3.6mΩ 2 1 3 Order Codes Item Sales Type Marking Package Pac.

Features

TO-247
 High ruggedness
 Low RDS(ON) (Typ 3.6mΩ)@VGS=10V
 Low Gate Charge (Typ 132nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification, Inverter , Li Battery Protect Board 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 100V ID : 120A RDS(ON) : 3.6mΩ 2 1 3 Order Codes Item .