SW055R68E7T - Samwin

SW055R68E7T N-channel MOSFET

1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 68V ID : 110A RDS(ON) : 5.6mΩ 2 1 3 Order Codes Item Sales T.

Features

N-channel Enhanced mode TO-220/TO-263 MOSFET
 High ruggedness
 Low RDS(ON) (Typ 5.6mΩ)@VGS=10V
 Low Gate Charge (Typ 94nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-220 TO-263 12 3 12 3 General Description 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 68V.