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SW055R68E7T |
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| Part Number | SW055R68E7T |
| Manufacturer | Samwin |
| Description | 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low ... |
| Features |
N-channel Enhanced mode TO-220/TO-263 MOSFET
High ruggedness Low RDS(ON) (Typ 5.6mΩ)@VGS=10V Low Gate Charge (Typ 94nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-220 TO-263 12 3 12 3 General Description 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 68V... |
| Document |
 SW055R68E7T Data Sheet
PDF 816.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SW055R06E7T |
Samwin |
N-channel MOSFET |
|
| 2 | SW05-0311 |
Tyco Electronics |
Match GaAs SPST Switch |
|
| 3 | SW058R72E7T |
Samwin |
N-channel MOSFET |
|
| 4 | SW05P |
AUK |
PIANO SWITCH |
|
| 5 | SW05P-K |
AUK |
PIANO SWITCH |
|