New Product N-Channel 30-V (D-S) MOSFET SUD50N03-16P Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.016 @ VGS = 10 V 30 0.024 @ VGS = 4.5 V TO-252 ID (A)a 15 12 FEATURES D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D High-Side DC/DC − Desktop − Server D D DDR DC/DC Converter GDS Top View Drain Connected to Tab Or.
D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D High-Side DC/DC − Desktop − Server D D DDR DC/DC Converter GDS Top View Drain Connected to Tab Ordering Information: SUD50N03-16P—E3 (Lead Free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUD50N03-10 |
Vishay Siliconix |
P-Channel MOSFET | |
2 | SUD50N03-11 |
Vishay Siliconix |
P-Channel MOSFET | |
3 | SUD50N03-12P |
Vishay Siliconix |
P-Channel MOSFET | |
4 | SUD50N03-06AP |
Vishay Siliconix |
N-Channel MOSFET | |
5 | SUD50N03-06P |
Vishay Siliconix |
P-Channel MOSFET | |
6 | SUD50N03-07 |
Vishay Siliconix |
P-Channel MOSFET | |
7 | SUD50N02-04P |
Vishay Siliconix |
P-Channel MOSFET | |
8 | SUD50N02-06P |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SUD50N02-09P |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SUD50N02-11P |
Vishay Siliconix |
N-Channel MOSFET | |
11 | SUD50N02-12P |
Vishay Siliconix |
N-Channel MOSFET | |
12 | SUD50N024-06P |
Vishay Siliconix |
P-Channel MOSFET |