SUD50N03-10 - Vishay Siliconix

SUD50N03-10 P-Channel MOSFET

SUD50N03-10 Siliconix N-Channel 30-V (D-S), 175_C MOSFET Product Summary VDS (V) 30 rDS(on) (W) 0.010 @ VGS = 10 V 0.019 @ VGS = 4.5 V ID (A) "15 "12 D TO-252 Drain Connected to Tab G D S G Top View Order Number: SUD50N03-10 S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Vol.

Features

, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253—Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors Symbol RthJA RthJC Typical Maximum 30 1.8 Unit _C/W 1 SUD50N03-10 Siliconix Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, T.