SUD50N02-06P - Vishay Siliconix

SUD50N02-06P N-Channel MOSFET

SUD50N02-06P Vishay Siliconix N-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.0060 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 26 21 TO-252 GDS Top View Drain Connected to Tab Ordering Information: SUD50N02-06P-E3 (Lead (Pb) free) FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized for High E.

Features

• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized for High Efficiency
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Synchronous Buck DC/DC Conversion - Desktop - Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TA = 25 °C TC = 25 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a IS Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissip.