SUD50N03-11 - Vishay Siliconix

SUD50N03-11 P-Channel MOSFET

SUD50N03-11 New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.011 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 50 43 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-11 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage.

Features

00 t v 10 sec Steady State Symbol RthJA RthJC RthJL Typical 17 50 2 4 Maximum 20 60 2.4 4.8 Unit _C/W _C/W 1 SUD50N03-11 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 5 V VGS = 10 V, ID = 25 A b Drain-Source On-State Resistance D i S O S .