SUD50N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 20 16 rDS(on) (W) 0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N03-07 SUD50N03-07—E3 ( Lead Fre.
ID (A) 20 16 rDS(on) (W) 0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N03-07 SUD50N03-07—E3 ( Lead Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TA = 25_C TA = 100_.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUD50N03-06AP |
Vishay Siliconix |
N-Channel MOSFET | |
2 | SUD50N03-06P |
Vishay Siliconix |
P-Channel MOSFET | |
3 | SUD50N03-10 |
Vishay Siliconix |
P-Channel MOSFET | |
4 | SUD50N03-11 |
Vishay Siliconix |
P-Channel MOSFET | |
5 | SUD50N03-12P |
Vishay Siliconix |
P-Channel MOSFET | |
6 | SUD50N03-16P |
Vishay |
N-Channel MOSFET | |
7 | SUD50N02-04P |
Vishay Siliconix |
P-Channel MOSFET | |
8 | SUD50N02-06P |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SUD50N02-09P |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SUD50N02-11P |
Vishay Siliconix |
N-Channel MOSFET | |
11 | SUD50N02-12P |
Vishay Siliconix |
N-Channel MOSFET | |
12 | SUD50N024-06P |
Vishay Siliconix |
P-Channel MOSFET |