ObThis series of devices implements second -generation MDmesh™ technology. This )revolutionary Power MOSFET associates a new t(svertical structure to the company’s strip layout to cyield one of the world’s lowest on-resistance and ugate charge. It is therefore suitable for the most Obsolete Proddemanding high efficiency converters. 3 2 1 TO-247 Figure 1. In.
Type
VDSS (@Tjmax)
RDS(on) max
ID
STW55NM50N 550 V <0.054 Ω 54 A
t(s)
■ 100% avalanche tested c
■ Low input capacitance and gate charge du
■ Low gate input resistance ProApplication te
■ Switching applications soleDescription ObThis series of devices implements second -generation MDmesh™ technology. This )revolutionary Power MOSFET associates a new t(svertical structure to the company’s strip layout to cyield one of the world’s lowest on-resistance and ugate charge. It is therefore suitable for the most Obsolete Proddemanding high efficiency converters.
3 2 1
TO-247
Figure 1. Internal schema.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STW55NM60N |
STMicroelectronics |
N-CHANNEL MOSFET | |
2 | STW55NM60ND |
STMicroelectronics |
N-channel MOSFET | |
3 | STW55NE10 |
ST Microelectronics |
N-CHANNEL MOSFET | |
4 | STW5093 |
ST Microelectronics |
2.7V SUPPLY 14-BIT LINEAR CODEC WITH HIGH-PERFORMANCE AUDIO FRONT-END | |
5 | STW5094 |
ST Microelectronics |
18 BIT 8kHz TO 48kHz LOW POWER STEREO AUDIO DAC | |
6 | STW5094A |
STMicroelectronics |
18-bit Low Power Asynchronous Stereo Audio DAC | |
7 | STW5095 |
ST Microelectronics |
Low Power Asynchronous Stereo Audio Codec with Integrated Power Amplifiers | |
8 | STW5098 |
STMicroelectronics |
Dual low power asynchronous stereo audio Codec | |
9 | STW50N10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
10 | STW50N65DM2AG |
STMicroelectronics |
N-Channel MOSFET | |
11 | STW50NB20 |
ST Microelectronics |
N - CHANNEL 200V - 0.047ohm - 50A - TO-247 PowerMESH MOSFET | |
12 | STW51000 |
ST Microelectronics |
SUPER INTEGRATED DSP ENGINE |