STW55NE10 - ST Microelectronics

STW55NE10 N-CHANNEL MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-247 INTERNAL SCHEMATIC DIAGRAM A.

Features

e Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/dt ( 1) Peak Diode Recovery voltage slope Ts tg Tj Storage Temperature Max. Operating Junction Temperature o o o Value 100 100 ± 20 55 35 220 180 1.2 9 -65 to 175 175 ( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C (
•) Pulse width limited by safe operating area January 1999 1/8 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com .