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www.DataSheet4U.com STW50N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST W50N10 s s s s s s s V DSS 100 V R DS(on) < 0.035 Ω ID 50 A TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION TO-247 .
ni t V V V A A A W W/ o C
o o
C C
(
•) Pulse width limited by safe operating area
ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
January 1998
1/8
DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
STW50N10
THERMAL DATA
R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max T yp 0.83 30 0.1 300
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limit.
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