STW50NB20 - ST Microelectronics

STW50NB20 N - CHANNEL 200V - 0.047ohm - 50A - TO-247 PowerMESH MOSFET

Using the latest high voltage technology, STMicroelectronics has designed an advanced TO-247 family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and INTERNAL SCHEMATIC DIAGRAM dv/dt capabilities an.

Features

GS Symb ol V DS V DGR V GS ID ID I DM (
• ) P tot dv/dt( 1 ) T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage Temperature Max. O perating Junction Temperature o o Value 200 200 ± 30 50 32 200 280 2.24 4 -65 to 150 150 ( 1) ISD ≤ 50 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C 1/8 (
•) Pulse width .