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STW20NM60 - ST Microelectronics

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STW20NM60 N-CHANNEL Power MOSFET

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic per.

Features

Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS 600V 600V 600V 600V 600V RDS(on) < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω ID 20A 20A 20A 20A 20A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance Applications
■ Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent av.

The same part from a different manufacturer

Datasheet STW20NM60 - INCHANGE STW20NM60

·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.

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