STW20NM60 |
Part Number | STW20NM60 |
Manufacturer | INCHANGE |
Description | ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Cont... |
Features |
·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 192 W TJ Max. Operatin... |
Document |
STW20NM60 Data Sheet
PDF 349.20KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STW20NM60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STW20NM60FD |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STW20NM60FD |
INCHANGE |
N-Channel MOSFET | |
4 | STW20NM50 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STW20NM50FD |
ST Microelectronics |
N-CHANNEL Power MOSFET |