This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology. Thanks to its strip layout and an AM01476v1_No_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very hig.
Order code
VDS
RDS(on) max.
STW20N60M2-EP
600 V
0.278 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
ID 13 A
D(2) G(1)
Applications
• Switching applications
• Tailored for very high frequency converters (f > 150 kHz)
Description
This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology. Thanks to its strip layout and an
AM01476v1_No_tab improved vertical structure, the device exhibits low on-resistance, optimized switching ch.
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2 | STW20N65M5 |
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7 | STW20NB50 |
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8 | STW20NC50 |
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9 | STW20NK50Z |
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10 | STW20NK70Z |
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11 | STW20NM50 |
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12 | STW20NM50FD |
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