STW20N90K5 - STMicroelectronics

STW20N90K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 S(3) AM01475V1 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STW20N90K5 Product summary Order.

Features

Order code VDS STW20N90K5 900 V
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected Applications
• Switching applications RDS(on ) max. 0.25 Ω ID 20 A Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 S(3) AM01475V1 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STW20N90K5 P.