le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the Company’s PowerMESH™ horizontal b layout. The resulting product has an outstanding low O on-resistance, impressively high dv/dt and excellent - avalanche characteristics. The adoption of the ) Company’s proprietary strip technique yields overall t(.
TO-247
INTERNAL SCHEMATIC DIAGRAM
Obsolete ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
20
A
ID
Drain Current (continuous) at TC = 100°C
12.6
A
IDM ( ) Drain Current (pulsed)
80
A
PTOT
Total Dissipation at TC = 25°C
214
W
Derating Factor
1.44
W/°C
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(
•)Pulse width limited by safe operating area (1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
February 2004
15
–65 t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STW20NM50FD |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STW20NM50FD |
INCHANGE |
N-Channel MOSFET | |
3 | STW20NM60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
4 | STW20NM60 |
INCHANGE |
N-Channel MOSFET | |
5 | STW20NM60FD |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STW20NM60FD |
INCHANGE |
N-Channel MOSFET | |
7 | STW20N60M2-EP |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STW20N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STW20N65M5 |
INCHANGE |
N-Channel MOSFET | |
10 | STW20N90K5 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STW20N95DK5 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STW20N95K5 |
STMicroelectronics |
N-channel Power MOSFET |