This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low.
Type STD6NF10 STU6NF10
VDSS 100 V 100 V
RDS(on) max < 0.250 Ω < 0.250 Ω
■ Exceptional dv/dt capability
■ 100% avalanche tested
ID 6A 6A
Application
■ Switching applications
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
3 2 1
IPAK
3 1
DPAK
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU6N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STU6N62K3 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STU6N65K3 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STU6N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STU6N95K5 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STU6NA100 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STU6NA90 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STU600S |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
9 | STU6010 |
EIC discrete Semiconductors |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR | |
10 | STU601S |
SamHop Microelectronics |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
11 | STU6025NL |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
12 | STU6025NLS |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |