STU6N65M2 - STMicroelectronics

STU6N65M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Order codes STF6N65M2 STP6N65M2 STU6N65M2 Table 1..

Features

Order codes STF6N65M2 STP6N65M2 STU6N65M2 VDS RDS(on) max ID 650 V 1.35 Ω 4A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected Figure 1. Internal schematic diagram , TAB Applications
• Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM1557.