STU6NA100 - STMicroelectronics

STU6NA100 N-channel Power MOSFET

® STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA100 www.DataSheet4U.com s TYPICAL s V DSS 1000 V R DS(on) < 1.7 Ω ID 6A s s s s s RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCE.

Features

perature o o Value 1000 1000 ± 30 6 3.9 24 160 1.28 -65 to 150 150 Unit V V V A A A W W/ o C o o C C (
•) Pulse width limited by safe operating area June 1998 1/5 STU6NA100 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.8 62 0.1 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR www.DataSheet4U.com Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Ener.